Performance Analysis of CMOS and FinFET Based SRAM
By: Joji, Jeny Elsa
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Contributor(s): Sreekala, K.S.
Publisher: New Delhi STM Journals 2018Edition: Vol, 8(3), Sep- Dec.Description: 23-27p.Subject(s): EXTC EngineeringOnline resources: Click Here
In:
Journal of VLSI design tools & technology (JoVDTT)Summary: CMOS devices are scaled to nanometer regime, the consequences such as short channel effects and variations in the process parameters are increased which affects the reliability and performance of the circuit. In order to over these issues, FinFET can be used as a suitable replacement for CMOS as it is a promising and better technology without sacrificing the reliability and performance of the applications and the circuit design. In this study, comparison of performance of CMOS and FINFET based SRAM is done. This comparison study will help to select the better technology to design the circuits in future.
| Item type | Current location | Call number | Status | Date due | Barcode | Item holds |
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Articles Abstract Database
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School of Engineering & Technology Archieval Section | Not for loan | 2021-2021741 |
CMOS devices are scaled to nanometer regime, the consequences such as short channel effects and variations in the process parameters are increased which affects the reliability and performance of the circuit. In order to over these issues, FinFET can be used as a suitable replacement for CMOS as it is a promising and better technology without sacrificing the reliability and performance of the applications and the circuit design. In this study, comparison of performance of CMOS and FINFET based SRAM is done. This comparison study will help to select the better technology to design the circuits in future.
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